By N. K. Das, H. L. Bertoni (auth.), Nirod K. Das, Henry L. Bertoni (eds.)
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Extra info for Directions for the Next Generation of MMIC Devices and Systems
2 dB has been measured in a MEM diaphragm switch at 9 10 GHz. The same switch demonstrated an isolation of 15 dB. This insertion loss is 27 competitive with the best phase-shifter switches presently being used . The isolation requires improvement, and will be investigated rigorously in the MAFET-3 Program. In the quasi-optical area, MEM switches can also be beneficial as phase shifters, but in a different implementation than the planar case. Since quasi-optical planar arrays operate on the entire wave-front, the MEM phase shifters can be added to each cell to introduce the proper amount of phase shift required to steer the beam.
For the microwave packaging materials database , material properties have to continually be collected, characterized, validated and added to the database. Another areathat needs to be accomplished is to make the database easily connected to the individual CAD, CAM and CAT tools . There are some other packaging needs that must be addressed for future DoD systems. Future systems will require increased density , increased power, increased manufacturability and decreased cost. There are currently other programs, in addition to the HDMP program, that are addressing these issues.
V . Mishra and R . • and Prof. L. Katehi of the U. of Michigan. REFERENCES 1. R. A. York, "Quasi-Optical Power Combining Techniques," in Millimeter and Microwave Engineering for Communications anti Radar, ed. by J . C. Wilts ( (Critical Reviews of Optical Science and Technology, 1994), vol. CR54, pp. 63-97. 2. Y-F. wu, B. P. Keller, S. Keller. D. Kapolnek, S. P. DenBaars, and U. K. Mishra, "GaN HFETs and MODFETs with Very High Breakdown Voltage and Large Transconductance" in Device Research Conference Digest.
Directions for the Next Generation of MMIC Devices and Systems by N. K. Das, H. L. Bertoni (auth.), Nirod K. Das, Henry L. Bertoni (eds.)